C4 joint reliability

ABSTRACT

In one embodiment, the invention provides a method comprising fabricating a die bump on a die, the die bump being shaped and dimensioned to at least reduce the flow of solder material used, to attach the die bump to a package substrate, towards an under bump metallurgy (UBM) layer located below the die bump. Advantageously, the method may comprise performing a substrate reflow operation to attach the package substrate to the die bump, without performing a separate wafer reflow operation to reflow the die bump.

FIELD OF THE INVENTION

Embodiments of the invention relate to flip chip (FC) technology, and inparticular to the under bump metallurgy (UBM) layer of a solder jointformed during flip chip assembly.

BACKGROUND

FIG. 1 of the drawings shows the components of a solder joint 10 formedusing FC technology. As will be seen, the solder joint 10 includes asolder bump 12 which is electrically connected to a metal or bond pad 14of a semiconductor die 16. The solder joint 10 also includes an underbump metallurgy (UBM) layer 18 which serves as a wetting layer for thesolder bump 12, and as a diffusion barrier to prevent the ingress ofmetals/solder into the semiconductor die 16, during various reflowoperations including wafer reflow chip join, ball attach and mounting onmotherboard

Wafer reflow involves reflowing the solder bump 12 on the die to removeoxides formed on the solder bump 12 so that the bump can be attached toa substrate solder during substrate reflow. Typically, the solder bump12 has a high-lead content, e.g., the solder bump 12 may be 90% lead(Pb) and 10% tin (Sn), and reflows at a temperature of around 330° C.During wafer reflow some of the Sn present in the die bump and reactswith the UBM layer 18.

During substrate reflow, the solder bump 12 is brought into contact witheutectic solder 20 formed on a substrate 22. Eutectic solder typicallycomprises about 63% Sn and 37% Pb and has a melting point of 183° C.During chip join to substrate the eutectic solder is heated to itsmelting point and beyond, e.g. to 220° C. During chip join reflow someof the eutectic solder 20 flows or wicks around the solder bump 12 andreacts with the UBM layer 18. More particularly, the tin from theeutectic solder 20 reacts with nickel from the UBM layer 18, therebyconsuming the nickel. This degrades the UBM layer 18, a problem that isexacerbated when subsequent motherboard reflow steps are performed attemperatures between 220° C. and 270° C. At this temperature, theeutectic solder 20 wicks around the solder bump 12, in the mannerdescribed above, and reacts with the UBM layer 18 thereby consuming moreof the tin in the UBM layer 18. Because the UBM layer 18 has beendegraded by the consumption of the tin content therein, as describedabove, the UBM layer 18 eventually cracks, leading to a failure of thesolder joint 10.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a schematic drawing of a solder joint;

FIG. 2 shows the solder joint of FIG. 1 being attached to a substrate;

FIG. 3 shows a schematic drawing of a solder bump in accordance with oneembodiment of the invention;

FIG. 4 shows a solder joint formed using the solder bump of FIG. 3;

FIG. 5 shows a schematic drawing of a solder bump in accordance withanother embodiment of the invention;

FIG. 6 shows a solder joint formed using the solder bump of FIG. 5; and

FIGS. 7 and 8 illustrate how a solder bump in accordance with theinvention may be manufactured.

DETAILED DESCRIPTION

In the following description, for purposes of explanation, numerousspecific details are set forth in order to provide a thoroughunderstanding of the invention. It will be apparent, however, to oneskilled in the art that the invention can be practiced without thesespecific details. In other instances, structures and devices are shownin block diagram form in order to avoid obscuring the invention.

Reference in this specification to “one embodiment” or “an embodiment”means that a particular feature, structure, or characteristic describedin connection with the embodiment is included in at least one embodimentof the invention. The appearances of the phrase “in one embodiment” invarious places in the specification are not necessarily all referring tothe same embodiment, nor are separate or alternative embodimentsmutually exclusive of other embodiments. Moreover, various features aredescribed which may be exhibited by some embodiments and not by others.Similarly, various requirements are described which may be requirementsfor some embodiments but not other embodiments.

FIG. 3 of the drawings illustrates a solder bump 30 which is formed on adie, in accordance with one embodiment of the invention. As will beseen, the solder bump 30 extends through an opening 32 in a passivationlayer formed on the die and makes contact with a UBM layer 34. Thesolder bump 30 has a distal end 36 which is remote from a near end 38.As will be seen, the solder bump 30 has a frusto-conical shape with thedistal end 36 having a greater or wider cross-sectional area than thenear end 38. Further, it will be seen that the solder bump 30 extendsbeyond the opening 32 in the passivation layer, which allows the solderbump to act as a barrier to prevent solder material from reaching theUBM layer 34 during substrate reflow. The solder bump 30 also includes awetting layer 40 formed over the solder bump 30. The wetting layer 40 isof a material that acts to prevent the oxidation of the die solder bump30 but also has good adhesion/wetting to the substrate solder. Forexample, in one embodiment, the wetting layer may comprise gold, cobalt,copper, or nickel, or an alloy of nickel/copper, gold and nickel.

FIG. 4 of the drawings shows the solder bump 30 in contact with solderbump 48 during a substrate reflow operation to form a solder joint. Thewider cross-section of the distal end 36 of the solder bump 30 acts as adiffusion barrier to at least reduce the flow of the eutectic soldermaterial from the solder bump 48 around the solder bump 30, thereby toprotect the UBM layer 34 from the eutectic solder material. Further,since the near end 38 of the solder bump 30 is wider than the opening 32in the passivation layer, the chances of the eutectic solder materialmaking contact with the UBM layer 34 and reacting therewith isnegligible.

Referring now to FIG. 5 of the drawings, reference numeral 42 generallyindicates a solder bump in accordance with another embodiment of theinvention. In FIG. 5, the same reference numerals used in FIG. 3 havebeen used to indicate like or similar features between the solder bumps42 and 30. One difference between the solder bumps 42 and 30 is thatinstead of being frusto-conical in shape, the solder bump 42 has agenerally T-shaped profile with an enlarged head 44. FIG. 6 of thedrawings shows the solder bump 42 in contact with solder bump 48 duringa substrate reflow operation. As will be seen, the enlarged head 44serves to act as a barrier to prevent or at least reduce eutectic soldermaterial from the solder bump 48 wicking around the solder bump 42 toreach the UBM layer 34.

Although only two examples of solder bumps in accordance with theinvention have been shown, it is to be understood that various othershapes of solder bumps are possible. Generally, a solder bump of thepresent invention includes a distal end which acts as a diffusionbarrier in order to prevent or at least reduce solder material wickingaround the solder bump and reaching the UBM layer below the solder bump.Further, in other embodiments a near end remote from the distal end maybe wider than an opening in a passivation layer within which the UBMlayer 34 is formed.

FIGS. 7A and 7B of the drawings illustrate process steps, in accordancewith one embodiment of the invention, to form the solder bump 30.Referring to FIG. 7A, a photoresist material is deposited over apassivation layer formed over a die. The photoresist material 50 ispatterned and developed to form an opening 52. The opening 52 has ashape that matches the shape of the solder bump 30 to be formed. FIG. 7Bshows how the solder bump 30 may be formed by depositing solder materialinto the opening 52. Once the solder material has been deposited, thephotoresist material 50 may be removed to reveal the solder bump 30.

FIG. 8 of the drawings illustrates how the solder bump 42 may bemanufactured in accordance with one embodiment of the invention. In thecase of the solder bump 42, two separate photoresist layers 54, 56 areused. The photoresist layer 54 is patterned and developed to match theshape of a body section of solder bump 42, excluding the enlarged head44, whereas the photoresist layer 56 is patterned and developed to matchthe shape of the enlarged head 44. Once the material to form the solderbump and wetting layer have been deposited, using conventionaltechniques, the photoresist layers 54 and 56 are removed to reveal thesolder bump 42.

Because of the wetting layer 40, oxidation of the solder bumps 30 and 42is prevented or at least reduced so that it is not necessary to performa wafer reflow operation prior to performing the substrate reflowoperations described with reference to FIGS. 4 and 6 of the drawings.Thus, one advantage of the techniques disclosed herein is that theconsumption of the tin content of the UBM layer 34 during wafer reflowis avoided.

It is to be understood that the wetting layer 40 formed on the solderbumps 30 and 42 is merely optional so that in other embodiments theremay be no wetting layer. In the case of embodiments that do not have awetting layer, greater quantities of flux than normally used duringsubstrate reflow is used in order to remove oxidation from the solderbumps 30 and 42. Thus, even in cases where the solder bumps 30 and 42 donot include a wetting layer 40, the wafer reflow step is avoided.

Although the present invention has been described with reference tospecific exemplary embodiments, it will be evident that the variousmodification and changes can be made to these embodiments withoutdeparting from the broader spirit of the invention as set forth in theclaims. Accordingly, the specification and drawings are to be regardedin an illustrative sense rather than in a restrictive sense.

1. A method, comprising: fabricating a die bump on a die, the die bumpbeing shaped and dimensioned to at least reduce the flow of soldermaterial, used to attach the die bump to a package substrate, towards anunder bump metallurgy (UBM) layer located below the die bump.
 2. Themethod of claim 1, wherein a distal end of the die bump remote from anear end of the die bump in contact with the UBM layer comprises anenlarged head.
 3. The method of claim 1, wherein the die bump has afrusto-conical shape wherein a distal end of the die bump remote from anear end of the die bump in contact with the UBM layer has a widercross-section than the near end.
 4. The method of claim 1, furthercomprising performing a substrate reflow operation to attach the packagesubstrate to the die bump, without performing a separate wafer reflowoperation to reflow the die bump.
 5. The method of claim 1, furthercomprising forming a wetting layer on the die bump to at least reduceoxidation of the die bump.
 6. The method of claim 5, wherein forming thewetting layer comprises sputtering or evaporating a material over thedie bump.
 7. The method of claim 5, wherein forming the wetting layercomprises electrolessplating or electroplating a material over the diebump.
 8. The method of claim 5, wherein the wetting layer comprises amaterial selected from the group consisting of nickel, gold, copper,cobalt, and alloys of these metals.
 9. A method, comprising: fabricatinga die bump on a die, the die bump making an electrical connection withan under bump metallurgy (UBM) layer on the die; and forming a wettinglayer on the die bump to at least reduce oxidation of the die bump. 10.The method of claim 9, wherein forming the wetting layer comprisessputtering or evaporating a material over the die bump.
 11. The methodof claim 9, wherein forming the wetting layer comprises electroplatingor electrolessplating a material over the die bump.
 12. The method ofclaim 9, wherein the wetting layer comprises a material selected fromthe group consisting of nickel, gold, copper, cobalt, and alloys ofthese metals.
 13. The method of claim 9, further comprising performing asubstrate reflow operation without performing a wafer reflow operationto reflow the die bump.
 14. An article of manufacture, comprising: asemiconductor die comprising an under bump metallurgy (UBM) layer; and adie bump in contact with the UBM layer and standing proud thereof, thedie bump being shaped and dimensioned to at least reduce the flow ofsolder material therearound towards the UBM layer during a substratereflow operation performed to form an electrical and/or mechanicalconnection between the die bump and a substrate.
 15. The article ofmanufacture of claim 14, wherein a distal end of the die bump remotefrom a near end of the die bump which is in contact with the UBM layercomprises an enlarged head that acts as a barrier to the flow of thesolder material.
 16. The article of manufacture of claim 14, wherein adistal end of the die bump remote from a near end of the die bump incontact with the UBM layer comprises a greater cross-sectional area thanthe near end.
 17. The article of manufacture of claim 14, furthercomprising forming a wetting layer on the die bump to at least reduceoxidation of the die bump.
 18. The article of manufacture of claim 17,wherein forming the wetting layer comprises electrolessplating orelectroplating a material over the die bump.
 19. The article ofmanufacture of claim 17, wherein forming the wetting layer comprisessputtering or evaporating a material over the die bump.
 20. The articleof manufacture of claim 17, wherein the wetting layer comprises amaterial selected from the group consisting of nickel, gold, copper,cobalt, and alloys of these metals.
 21. The article of manufacture ofclaim 14, further comprising performing a substrate reflow operationwithout performing a wafer reflow operation to reflow the die bump. 22.An article of manufacture, comprising: a semiconductor die comprising anunder bump metallurgy (UBM) layer; and a die bump in contact with theUBM layer and standing proud thereof, the die bump including a wettinglayer formed thereon to at least reduce oxidation of the die bump. 23.The article of manufacture of claim 22, wherein the die bump is shapedand dimensioned to at least prevent the flow of solder materialtherearound and towards the UBM layer during a substrate reflowoperation performed to form an electrical and/or mechanical connectionbetween the die bump and a substrate.
 24. The article of manufacture ofclaim 23, wherein a distal end of the die bump remote from a near end ofthe die bump in contact with the UBM layer comprises an enlarged head.25. The article of manufacture of claim 23, wherein the die bump has afrusto-concial shape wherein a distal end of the die bump remote from anear end of the die bump in contact with the UBM layer has a widercross-section than the near end.
 26. The article of manufacture of claim22, wherein the wetting layer comprises a material selected from thegroup consisting of nickel, copper, cobalt, and alloys of these metals.27. An article of manufacture comprising: a semiconductor die comprisingan under bump metallurgy (UBM) layer; and a die bump in contact with theUBM layer and standing proud thereof, the die bump being shaped anddimensioned to at least prevent the flow of solder material therearoundtowards the UBM layer during a substrate reflow operation performed toform an electrical and/or mechanical connection between the die bump anda substrate.
 28. The article of manufacture of claim 27, wherein adistal end of the die bump remote from a near end of the die bump incontact with the UBM layer comprises an enlarged head that acts as abarrier to the flow of the solder material.
 29. The article ofmanufacture of claim 27, wherein the die bump comprises a wetting layerformed thereon to at least reduce oxidation of the die bump.
 30. Thearticle of manufacture of claim 29, wherein the wetting layer comprisesa material selected from the group consisting of nickel, gold, copper,cobalt, and/or alloys of these metals.